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SGH23N60UF
FEATURES
* High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A) * High Input Impedance
N-CHANNEL IGBT
TO-3P
APPLICATIONS
* AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast C
G E
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGES IC
Characteristics
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25C Collector Current @ Tc = 100C
Rating 600 20 23 12 92 100 40 -55 ~ 150 -55 ~ 150 300
Units V V A A A W W C C C
ICM (1) PC
Pulsed Collector Current Maximum Power Dissipation @Tc = 25C Maximum Power Dissipation @Tc = 100C
Tj Tstg TL
Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. For Soldering Purposes, 1/8" from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
Rev.B
(c)1999 Fairchild Semiconductor Corporation
SGH23N60UF
ELECTRICAL CHARACTERISTICS
(Tc=25C,Unless Otherwise Specified) Symbol
BVCES VCES/ TJ VGE(th) ICES IGES VCE(sat)
N-CHANNEL IGBT
Characteristics
C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage
Test Conditions
VGE = 0V , IC = 250uA VGE = 0V , IC = 1mA
Min
600 -
Typ Max
0.6 -
Units
V V/C
IC = 12mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Ic=12A, VGE = 15V Ic=23A, VGE = 15V VGE = 0V , f = 1MHz VCE = 30V
4.0 -
5.5 1.95 2.6 720 65 26 12 20 55 100 0.11 0.19 0.3 48 11 14 7.5
7.5 250 100 2.6 85 220 0.5 72 16 21 -
V uA nA V V pF pF pF ns ns ns ns mJ mJ mJ nC nC nC nH
Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le
Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Turn on Switching Loss Turn off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance
VCC = 300V , IC = 12A VGE = 15V RG = 23 Inductive Load
-
Vcc = 300V VGE = 15V Ic = 12A Measured 5mm from PKG
-
SGH23N60UF
THERMAL RESISTANCE
Symbol
RJC RJA RCS
N-CHANNEL IGBT
Characteristics
Junction-to-Case Junction-to-Case Case-to-Sink
Min
-
Typ
0.24
Max
1.2 40 -
Units
C/W C/W C/W
SGH23N60UF
20 Vcc = 300V Load Current : peak of square wave 100
N-CHANNEL IGBT
80 15 Tc = 25
Load Current [A]
60 10
Tc = 100
Ic [A]
40
5 20 Duty cycle : 50% Tc = 100 Power Dissipation = 21W 0 0.1 0 1 10 100 1000 0 2 4 6 8 10
Frequency [kHz]
Vce [V]
Fig.1 Typical Load Current vs. Frequency
Fig.2 Typical Output Characteristics
30
Vge = 15V
3.2
3.0 25 2.8 20 Ic = 23A
Max DC Current [A]
2.6
Vce(sat) [V]
15
2.4
2.2 10 Ic = 12A 2.0 5 1.8
0 25 50 75
1.6
Tc [
]
100
125
150
20
40
60
80
Tc [
]
100
120
140
Fig.3 Maximum Collector Current vs. Case Temperature
Fig.4 Collector to Emitter Voltage vs. Case Temperature
SGH23N60UF
10
N-CHANNEL IGBT
T hermal Response [Zthjc]
1 0 .5
0 .2 0 .1 0 .1
Pdm
0 .0 5
t1
0 .0 2 0 .0 1 s ingle puls e
t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc
0 .0 0 1 0 .0 1 0 .1 1 10
0 .0 1 0 .0 0 0 0 1 0 .0 0 0 1
Rectangular Pulse Duration [sec]
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
1200
18 Vcc = 300V Ic = 12A 16
1000 14
800
Capacitance [pF]
Cies
12
600
VGE [V]
Coes Cres 1 10
10
8
400
6
4 200 2
0
0 0 10 20 30 40
Vce [V]
Qg [nC]
Fig.6 Typical Capacitance vs. Collector to Emitter Voltage
Fig.7 Typical Gate Charge vs. Gate to Emitter Voltage
SGH23N60UF
700 Vcc = 300V Ic = 12A 600 Esw 1.2 1.4 Vcc = 300V Rg = 23 Vge = 15V
N-CHANNEL IGBT
Ic =24A
500
1.0
Energy [uJ]
400
Energy [mJ]
Eon
0.8
300 Eoff
0.6 Ic = 12A 0.4
200
Ic = 6A 100 0.2
0 0 40 80
Rg [
+]
0.0 160 200 20 40
120
60
Tc [
]
80
100
Fig.8 Typical Switching Loss vs. Gate Resistance
1.2 Vcc = 300V Rg =23 Tc = 100 Esw
Fig.9 Typical Switching Loss vs. Case Temperature
1.0
100
0.8
Eoff
Energy [mJ]
0.6
Ic [A]
10 Eon
0.4
0.2
Safe Operating Area Vge = 20V, Tc = 100
1000
0.0 4 8 12 16 20 24
1 1 10 100
Ic [A]
Vce [V]
Fig.10 Typical Switching loss vs. Collector to Emitter Current
Fig.11 Turn-off SOA
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANAR TM MICROWIRETM POPTM PowerTrenchTM QSTM QuietSeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or (c) whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
LIFE SUPPORT POLICY Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notices in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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